Heisener Electronics
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MMBT6517LT1G

350V|100mA|225mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 350V 0.1A SOT23

Specifications

Brand
ON Semiconductor
Package
TO-236-3, SC-59, SOT-23-3
Packaging
—
Weight
—

Total Inventory

141pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MMBT6517LT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 5mA, 50mA
Current - Collector Cutoff (Max)50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 50mA, 10V
Power - Max225mW
Frequency - Transition200MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)

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Datasheet & Documents

mmbt6517lt3g.pdf

PDF Document · 5 pages

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