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40V|200mA|350mW
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TRANSISTOR, PNP, -40V, -0.2A, 10
Specifications
- Brand
- Taiwan Semiconductor Corporation
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
484pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MMBT3906L-RFG_1 from Taiwan Semiconductor Corporation fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Taiwan Semiconductor Corporation | |
| Series | - | |
| Transistor Type | PNP | |
| Current - Collector (Ic) (Max) | 200mA | |
| Voltage - Collector Emitter Breakdown (Max) | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V | |
| Power - Max | 350mW | |
| Frequency - Transition | 250MHz | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23 |
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