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40V|200µA @ 20V|350mW
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INTEGRATED CIRCUIT
Specifications
- Brand
- ON Semiconductor
- Package
- TO-236-3, SC-59, SOT-23-3
- Packaging
- —
- Weight
- —
Total Inventory
126pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MMBFJ201_G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Voltage - Breakdown (V(BR)GSS) | 40V | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200µA @ 20V | |
| Current Drain (Id) - Max | - | |
| Voltage - Cutoff (VGS off) @ Id | 300mV @ 10nA | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Resistance - RDS(On) | - | |
| Power - Max | 350mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 |
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