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MJE5731G

350V|1A|40W
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TRANS PNP 350V 1A TO-220AB

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

1,639pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJE5731G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Power - Max40W
Frequency - Transition10MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Datasheet & Documents

mje5731.pdf

PDF Document · 6 pages

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