Heisener Electronics
BOM

MJE18006G

450V|6A|100W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 450V 6A TO-220AB

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

206pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJE18006G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesSWITCHMODE™
Transistor TypeNPN
Current - Collector (Ic) (Max)6A
Voltage - Collector Emitter Breakdown (Max)450V
Vce Saturation (Max) @ Ib, Ic700mV @ 600mA, 3A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce6 @ 3A, 1V
Power - Max100W
Frequency - Transition14MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

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Datasheet & Documents

mje18006g.pdf

PDF Document · 7 pages

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Datasheet Preview

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