Heisener Electronics
BOM

MJE18002G

450V|2A|50W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN 450V 2A TO220AB

Specifications

Brand
ON Semiconductor
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

459pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJE18002G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
SeriesSWITCHMODE™
Transistor TypeNPN
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)450V
Vce Saturation (Max) @ Ib, Ic500mV @ 200mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 200mA, 5V
Power - Max50W
Frequency - Transition13MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB

Recommended Products

TNPW2512191KBETG

TNPW2512191KBETG

RES 191K OHM 0.1% 1/2W 2512

SIT9120AC-1B3-33E98-304000E

SIT9120AC-1B3-33E98-304000E

MEMS OSC XO 98.3040MHZ LVPECL

SIT8208AC-82-28E-33-300000T

SIT8208AC-82-28E-33-300000T

MEMS OSC XO 33.3000MHZ LVCMOS LV

SIT5156AI-F733JH

SIT5156AI-F733JH

OSC PROGRAMMABLE DCTCXO

SIT3807ACG2-25EM

SIT3807ACG2-25EM

MEMS OSC PROG VCXO LVCMOS 2.5V

C0603C169C1HAC7867

C0603C169C1HAC7867

CAP CER 0603 1.6PF 100V ULTRA ST

HSE18-B4A1AA

HSE18-B4A1AA

SENSOR THROUGH-BEAM 20M NPN/PNP

DP11H3015A30P

DP11H3015A30P

DP11 HOR 15P 30DET 30P M7*5MM

GTC00RV24-22S

GTC00RV24-22S

GT 4C 4#8 SKT RECP WALL

MS27505E11B99A_64

MS27505E11B99A_64

LJT 6C 6#20 PIN RECP

Datasheet & Documents

mje18002g.pdf

PDF Document · 8 pages

Download

Datasheet Preview

Download