Heisener Electronics
BOM

MJD5731T4G

350V|1A|1.56W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS PNP 350V 1A DPAK

Specifications

Brand
ON Semiconductor
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
—
Weight
—

Total Inventory

140pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJD5731T4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP
Current - Collector (Ic) (Max)1A
Voltage - Collector Emitter Breakdown (Max)350V
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 1A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 300mA, 10V
Power - Max1.56W
Frequency - Transition10MHz
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Datasheet & Documents

mjd5731t4.pdf

PDF Document · 5 pages

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Datasheet Preview

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