Heisener Electronics
BOM

MJD122T4G

100V|8A|1.75W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN DARL 100V 8A DPAK

Specifications

Brand
ON Semiconductor
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
—
Weight
—

Total Inventory

299pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJD122T4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Power - Max1.75W
Frequency - Transition4MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

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Datasheet & Documents

mjd122t4_6b.pdf

PDF Document · 8 pages

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Datasheet Preview

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