Heisener Electronics
BOM

MJD117G

100V|2A|1.75W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS PNP DARL 100V 2A DPAK

Specifications

Brand
ON Semiconductor
Package
TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging
—
Weight
—

Total Inventory

2,233pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MJD117G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
Transistor TypePNP - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageDPAK

Recommended Products

9T08052A2001CBHFT

9T08052A2001CBHFT

RES SMD 2K OHM 0.25% 1/8W 0805

9T08052A2491DBHFT

9T08052A2491DBHFT

RES SMD 2.49K OHM 0.5% 1/8W 0805

SIT1602BI-82-XXN-74-250000Y

SIT1602BI-82-XXN-74-250000Y

MEMS OSC XO 74.2500MHZ H/LV-CMOS

1210Y0500682GCT

1210Y0500682GCT

CAP CER 6800PF 50V C0G/NP0 1210

VJ1206A122KXXPW1BC

VJ1206A122KXXPW1BC

CAP CER 1200PF 25V C0G/NP0 1206

VE-JTN-IY-S

VE-JTN-IY-S

DC DC CONVERTER 18.5V 50W

PQ1X291M2ZP

PQ1X291M2ZP

IC REG LINEAR 2.9V 150MA SOT23-5

8D115F97AA

8D115F97AA

8D 12C 8#20 4#16 PIN RECP

AMM36DTBI

AMM36DTBI

CONN EDGE DUAL FMALE 72POS 0.156

GBC44DRXS

GBC44DRXS

CONN EDGE DUAL FMALE 88POS 0.100

Datasheet & Documents

mjd117rlg.pdf

PDF Document · 10 pages

Download

Datasheet Preview

Download