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MGSF2N02ELT1G

20V|2.8A (Ta)|1.25W (Ta)
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MOSFET N-CH 20V 2.8A SOT-23

Specifications

Brand
ON Semiconductor
Package
SOT-23-3 (TO-236)
Packaging
—
Weight
—

Total Inventory

4,818pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MGSF2N02ELT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs85mOhm @ 3.6A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.5nC @ 4V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds150pF @ 5V
FET Feature-
Power Dissipation (Max)1.25W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

mvsf2n02elt1g.pdf

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