Heisener Electronics
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MGSF1N03LT1

30V|1.6A (Ta)|420mW (Ta)
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MOSFET N-CH 30V 1.6A SOT-23

Specifications

Brand
ON Semiconductor
Package
SOT-23-3 (TO-236)
Packaging
—
Weight
—

Total Inventory

433pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MGSF1N03LT1 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs100mOhm @ 1.2A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 5V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3 (TO-236)
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

mgsf1n03lt3g.pdf

PDF Document · 6 pages

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