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200V|582A
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DIODE GEN PURP 200V 582A Y4-M6
Specifications
- Brand
- IXYS
- Package
- Y4-M6
- Packaging
- —
- Weight
- —
Total Inventory
319pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MEO550-02DA from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Current - Average Rectified (Io) | 582A | |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 520A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 200ns | |
| Current - Reverse Leakage @ Vr | 5mA @ 200V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Chassis Mount | |
| Package / Case | Y4-M6 | |
| Supplier Device Package | Y4-M6 | |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Datasheet & Documents
meo550-02da.pdf
PDF Document · 2 pages
