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35V|200A
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DIODE SCHOTTKY 35V 200A 2 TOWER
Specifications
- Brand
- GeneSiC Semiconductor
- Package
- Twin Tower
- Packaging
- —
- Weight
- —
Total Inventory
405pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how MBR40035CTL from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| Diode Configuration | 1 Pair Common Cathode | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 35V | |
| Current - Average Rectified (Io) (per Diode) | 200A | |
| Voltage - Forward (Vf) (Max) @ If | 600mV @ 200A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 3mA @ 35V | |
| Operating Temperature - Junction | -55°C ~ 150°C | |
| Mounting Type | Chassis Mount | |
| Package / Case | Twin Tower | |
| Supplier Device Package | Twin Tower |
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Datasheet & Documents
mbr40035ctrl.pdf
PDF Document · 3 pages
