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MBR200100CT

100V|200A (DC)
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DIODE MODULE 100V 200A 2TOWER

Specifications

Brand
GeneSiC Semiconductor
Package
Twin Tower
Packaging
—
Weight
—

Total Inventory

255pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how MBR200100CT from GeneSiC Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerGeneSiC Semiconductor
Series-
Diode Configuration1 Pair Common Cathode
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io) (per Diode)200A (DC)
Voltage - Forward (Vf) (Max) @ If840mV @ 100A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr5mA @ 20V
Operating Temperature - Junction-
Mounting TypeChassis Mount
Package / CaseTwin Tower
Supplier Device PackageTwin Tower

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Datasheet & Documents

mbr20080ctr.pdf

PDF Document · 3 pages

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Datasheet Preview

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