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1200 V|358A
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DIODE GEN PURP 1.2KV 358A W1
Specifications
- Brand
- IXYS
- Package
- DO-200AB, A-PUK
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how M0358WC120 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| Diode Type | Standard | |
| Voltage - DC Reverse (Vr) (Max) | 1200 V | |
| Current - Average Rectified (Io) | 358A | |
| Voltage - Forward (Vf) (Max) @ If | 2.1 V @ 750 A | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 1.4 µs | |
| Current - Reverse Leakage @ Vr | 20 mA @ 1200 V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Clamp On | |
| Package / Case | DO-200AB, A-PUK | |
| Supplier Device Package | W1 | |
| Operating Temperature - Junction | -40°C ~ 125°C |
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