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35V|8A
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DIODE SCHOTTKY 35V 8A DO214AB
Specifications
- Brand
- Microsemi
- Package
- DO-214AB, SMC
- Packaging
- —
- Weight
- —
Total Inventory
313pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how LSM835J-TR13 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | - | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 35V | |
| Current - Average Rectified (Io) | 8A | |
| Voltage - Forward (Vf) (Max) @ If | 520mV @ 8A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | - | |
| Current - Reverse Leakage @ Vr | 2mA @ 35V | |
| Capacitance @ Vr, F | - | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AB, SMC | |
| Supplier Device Package | DO-214AB | |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Datasheet & Documents
lsm845je3.pdf
PDF Document · 2 pages
