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4.75V ~ 5.25V, 6V ~ 18V|1.5A, 3A
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IC GATE DRVR GAN MOSFET
Specifications
- Brand
- Texas Instruments
- Package
- 19-WFQFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
18,282pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how LMG1210RVRR from Texas Instruments fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Texas Instruments | |
| Series | - | |
| Driven Configuration | Half-Bridge | |
| Channel Type | Independent | |
| Number of Drivers | 2 | |
| Gate Type | N-Channel MOSFET | |
| Voltage - Supply | 4.75V ~ 5.25V, 6V ~ 18V | |
| Logic Voltage - VIL, VIH | - | |
| Current - Peak Output (Source, Sink) | 1.5A, 3A | |
| Input Type | Non-Inverting | |
| High Side Voltage - Max (Bootstrap) | 200 V | |
| Rise / Fall Time (Typ) | 500ps, 500ps | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| Mounting Type | Surface Mount, Wettable Flank | |
| Package / Case | 19-WFQFN Exposed Pad | |
| Supplier Device Package | 19-WQFN (3x4) |
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