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100 V|12 A|100 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
POWER BJT
Specifications
- Brand
- Microchip Technology
- Package
- TO-254-3, TO-254AA
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how JANS2N7371 from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microchip Technology | |
| Series | - | |
| Transistor Type | PNP - Darlington | |
| Current - Collector (Ic) (Max) | 12 A | |
| Voltage - Collector Emitter Breakdown (Max) | 100 V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A | |
| Current - Collector Cutoff (Max) | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V | |
| Power - Max | 100 W | |
| Frequency - Transition | - | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-254-3, TO-254AA | |
| Supplier Device Package | TO-254AA |
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