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JANS1N5811US

150 V|3A
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DIODE GEN PURP 150V 3A B SQ-MELF

Specifications

Brand
Microchip Technology
Package
SQ-MELF, B
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how JANS1N5811US from Microchip Technology fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerMicrochip Technology
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)150 V
Current - Average Rectified (Io)3A
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
Current - Reverse Leakage @ Vr-
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseSQ-MELF, B
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C

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