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100V|1A|1.4W
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MOSFET 4N-CH 100V 1A MO-036AB
Specifications
- Brand
- Microsemi
- Package
- 14-DIP (0.300", 7.62mm)
- Packaging
- —
- Weight
- —
Total Inventory
453pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how JAN2N7334 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Microsemi Corporation | |
| Series | Military, MIL-PRF-19500/597 | |
| FET Type | 4 N-Channel | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 1A | |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Power - Max | 1.4W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | 14-DIP (0.300", 7.62mm) | |
| Supplier Device Package | MO-036AB |
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