Heisener Electronics
BOM

JAN2N5015

1000V|200mA|1W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NPN TRANSISTOR

Specifications

Brand
Microsemi
Package
TO-205AA, TO-5-3 Metal Can
Packaging
—
Weight
—

Total Inventory

116pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how JAN2N5015 from Microsemi fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerMicrosemi Corporation
SeriesMilitary, MIL-PRF-19500/727
Transistor TypeNPN
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)1000V
Vce Saturation (Max) @ Ib, Ic-
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 20mA, 10V
Power - Max1W
Frequency - Transition-
Operating Temperature-65°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AA, TO-5-3 Metal Can
Supplier Device PackageTO-5

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