Heisener Electronics
BOM

J112RL1G

35V|5mA @ 15V|350mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

JFET N-CH 35V 0.35W TO92

Specifications

Brand
ON Semiconductor
Package
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Packaging
—
Weight
—

Total Inventory

466pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how J112RL1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
Voltage - Breakdown (V(BR)GSS)35V
Drain to Source Voltage (Vdss)-
Current - Drain (Idss) @ Vds (Vgs=0)5mA @ 15V
Current Drain (Id) - Max-
Voltage - Cutoff (VGS off) @ Id1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds-
Resistance - RDS(On)50 Ohms
Power - Max350mW
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device PackageTO-92-3

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Datasheet & Documents

j112rlrag.pdf

PDF Document · 7 pages

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Datasheet Preview

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