Heisener Electronics
BOM

IXYP10N65B3D1

650 V|32 A|160 W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

IGBT PT 650V 32A TO220

Specifications

Brand
IXYS
Package
TO-220-3
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXYP10N65B3D1 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesXPT™, GenX3™
IGBT TypePT
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)32 A
Current - Collector Pulsed (Icm)62 A
Vce(on) (Max) @ Vge, Ic1.95V @ 15V, 10A
Power - Max160 W
Switching Energy300µJ (on), 200µJ (off)
Input TypeStandard
Gate Charge20 nC
Td (on/off) @ 25°C17ns/125ns
Test Condition400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)29 ns
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220

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