Heisener Electronics
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IXTY1N80

800V|750mA (Tc)|40W (Tc)
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MOSFET N-CH 800V 750MA TO-252AA

Specifications

Brand
IXYS
Package
TO-252AA
Packaging
—
Weight
—

Total Inventory

133pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTY1N80 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C750mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds220pF @ 25V
FET Feature-
Power Dissipation (Max)40W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

ixtp1n80.pdf

PDF Document · 2 pages

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