Heisener Electronics
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IXTY08N100D2-TRL

1000 V|800mA (Tj)|60W (Tc)
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MOSFET N-CH 1000V 800MA TO252

Specifications

Brand
IXYS
Package
TO-252AA
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTY08N100D2-TRL from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesDepletion
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C800mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs21Ohm @ 400mA, 0V
Vgs(th) (Max) @ Id4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs14.6 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds325 pF @ 25 V
FET FeatureDepletion Mode
Power Dissipation (Max)60W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63

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