Heisener Electronics
BOM

IXTT52N30P

300V|52A (Tc)|400W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 300V 52A TO-268

Specifications

Brand
IXYS
Package
TO-268
Packaging
—
Weight
—

Total Inventory

182pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTT52N30P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs66mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3490pF @ 25V
FET Feature-
Power Dissipation (Max)400W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-268
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Recommended Products

SIT9120AI-1B3-XXE155-520000E

SIT9120AI-1B3-XXE155-520000E

MEMS OSC XO 155.5200MHZ LVPECL

353TB5A270R

353TB5A270R

XTAL OSC VCXO 27.0000MHZ HCMOS

06031U2R2BAT2A

06031U2R2BAT2A

CAP CER 2.2PF 100V NP0 0603

VE-BWM-IW-F1

VE-BWM-IW-F1

DC DC CONVERTER 10V 100W

V24B8M200BG3

V24B8M200BG3

DC DC CONVERTER 8V 200W

TM1062DCA

TM1062DCA

IC TRANSCEIVER 1/1 MODULE

OPA2350PAG4

OPA2350PAG4

IC OPAMP GP 2 CIRCUIT 8DIP

NRVBA320T3G

NRVBA320T3G

DIODE SCHOTTKY 20V 3A SMA

ESQT-105-02-G-D-718

ESQT-105-02-G-D-718

ELEVATED 2MM SOCKETS

DW-10-15-T-S-330

DW-10-15-T-S-330

.025" BOARD SPACERS

Datasheet & Documents

ixtt52n30p.pdf

PDF Document · 5 pages

Download

Datasheet Preview

Download