Heisener Electronics
BOM

IXTQ86N20T

200V|86A (Tc)|480W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 200V 86A TO-3P

Specifications

Brand
IXYS
Package
TO-3P
Packaging
—
Weight
—

Total Inventory

328pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTQ86N20T from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs29mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs90nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)480W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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