Contact
Send MessageIXTQ34N65X2M
650 V|34A (Tc)|43W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount
DISCRETE MOSFET 34A 650V X2 TO3P
Specifications
- Brand
- IXYS
- Package
- TO-3P
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXTQ34N65X2M from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 96mOhm @ 17A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 43W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P | |
| Package / Case | TO-3P-3, SC-65-3 |
Recommended Products
RES 38.3 OHM 1/4W .1% AXIAL
RES 11 OHM 0.5% 1/3W 2010
MEMS OSC XO 62.5000MHZ H/LV-CMOS
RELAY GEN PURPOSE SPST 5A 12V
CL CAPLESS 200MA HIGH SPEED LDO
PCB HDR 534016AGS1
6.5MM WTB HDR WBOSSKINK NAT6CKT
CONN EDGE DUAL FMALE 25POS 0.100
CONN EDGE DUAL FMALE 56POS 0.125
CONNECTOR RECEPT 48POS R/A
