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100V|200A (Tc)|550W (Tc)
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MOSFET N-CH 100V 200A TO-3P
Specifications
- Brand
- IXYS
- Package
- TO-3P
- Packaging
- —
- Weight
- —
Total Inventory
354pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXTQ200N10T from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | TrenchMV™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 152nC @ 10V | |
| Vgs (Max) | ±30V | |
| Input Capacitance (Ciss) (Max) @ Vds | 9400pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 550W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-3P | |
| Package / Case | TO-3P-3, SC-65-3 |
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CIRCULAR
Datasheet & Documents
ixtq200n10t.pdf
PDF Document · 5 pages
