Heisener Electronics
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IXTQ110N055P

55V|110A (Tc)|390W (Tc)
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MOSFET N-CH 55V 110A TO-3P

Specifications

Brand
IXYS
Package
TO-3P
Packaging
—
Weight
—

Total Inventory

213pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTQ110N055P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesPolarHT™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs76nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2210pF @ 25V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P
Package / CaseTO-3P-3, SC-65-3

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Datasheet & Documents

ixtq110n055p.pdf

PDF Document · 5 pages

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