Heisener Electronics
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IXTP8N65X2M

650V|4A (Tc)|32W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 650V 4A X2 TO-220

Specifications

Brand
IXYS
Package
TO-220
Packaging
—
Weight
—

Total Inventory

149pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTP8N65X2M from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)32W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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