Heisener Electronics
BOM

IXTP8N65X2

650V|8A (Tc)|150W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 650V 8A X2 TO-220

Specifications

Brand
IXYS
Package
TO-220
Packaging
—
Weight
—

Total Inventory

241pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTP8N65X2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 4A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds800pF @ 25V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

Recommended Products

Y16255K49000Q24W_1

Y16255K49000Q24W_1

RES SMD 5.49KOHM 0.02% 0.3W 1206

DSC1001BL5-120-0000

DSC1001BL5-120-0000

MEMS OSC XO 120.0000MHZ CMOS SMD

PTFT1206L1500JV

PTFT1206L1500JV

THERMISTOR PTC 150 OHM 5% 1206

MPD6D107S

MPD6D107S

DC DC CONVERTER 3.3V 10W

MIAA10WE600TMH

MIAA10WE600TMH

MODULE IGBT CBI

ZXMD63C02XTA

ZXMD63C02XTA

MOSFET N/P-CH 20V 8-MSOP

MS4800A-14-1080-10X-10R

MS4800A-14-1080-10X-10R

SAFETY LIGHT CURTAIN

CTV07RW-25-35SB

CTV07RW-25-35SB

CONN RCPT FMALE 128POS GOLD CRMP

345-080-520-202

345-080-520-202

CONN EDGE DUAL FMALE 80POS 0.100

S1C17M30F001100

S1C17M30F001100

IC MCU 16BIT 48KB FLASH 48TQFP12

Datasheet & Documents

ixty8n65x2.pdf

PDF Document · 2 pages

Download

Datasheet Preview

Download