Heisener Electronics
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IXTP1R4N60P

600V|1.4A (Tc)|50W (Tc)
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MOSFET N-CH 600V 1.4A TO-220

Specifications

Brand
IXYS
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

105pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTP1R4N60P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs9Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs5.2nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds140pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

ixtu1r4n60p.pdf

PDF Document · 4 pages

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