Heisener Electronics
BOM

IXTP01N100D

1000V|100mA (Tc)|1.1W (Ta), 25W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 1KV .1A TO-220AB

Specifications

Brand
IXYS
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

1,980pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTP01N100D from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C100mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs110Ohm @ 50mA, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds120pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)1.1W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

ixtu01n100d.pdf

PDF Document · 2 pages

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