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IXTN22N100L

1000V|22A (Tc)|700W (Tc)
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MOSFET N-CH 1000V 22A SOT-227

Specifications

Brand
IXYS
Package
SOT-227B
Packaging
—
Weight
—

Total Inventory

564pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTN22N100L from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Rigorous incoming quality inspection
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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs600mOhm @ 11A, 20V
Vgs(th) (Max) @ Id5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs270nC @ 15V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds7050pF @ 25V
FET Feature-
Power Dissipation (Max)700W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227B
Package / CaseSOT-227-4, miniBLOC

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Datasheet & Documents

ixtn22n100l.pdf

PDF Document · 5 pages

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