Heisener Electronics
BOM

IXTM5N100

1000V|5A (Tc)|180W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

POWER MOSFET TO-3

Specifications

Brand
IXYS
Package
TO-204AA
Packaging
—
Weight
—

Total Inventory

388pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTM5N100 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)180W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-204AA
Package / CaseTO-204AA, TO-3

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Datasheet & Documents

ixtm5n100a.pdf

PDF Document · 4 pages

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