Heisener Electronics
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IXTK3N250L

2500 V|3A (Tc)|417W (Tc)
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MOSFET N-CH 2500V 3A TO264

Specifications

Brand
IXYS
Package
TO-264 (IXTK)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTK3N250L from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesLinear
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)2500 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V
FET Feature-
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 (IXTK)
Package / CaseTO-264-3, TO-264AA

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