Heisener Electronics
BOM

IXTH75N10

100V|75A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 100V 75A TO247AD

Specifications

Brand
IXYS
Package
TO-247 (IXTH)
Packaging
—
Weight
—

Total Inventory

265pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTH75N10 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesMegaMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs20mOhm @ 37.5A, 10V
Vgs(th) (Max) @ Id4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4500pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

Recommended Products

HS50-560R-J

HS50-560R-J

RES CHAS MNT 560 OHM 5% 50W

SIT8208AI-82-18E-62-500000Y

SIT8208AI-82-18E-62-500000Y

MEMS OSC XO 62.5000MHZ LVCMOS LV

SIT1602BC-83-28N-65-000000X

SIT1602BC-83-28N-65-000000X

MEMS OSC XO 65.0000MHZ H/LV-CMOS

SIT8009BCE21-XXE

SIT8009BCE21-XXE

MEMS OSC PRG XO HCMOS 2.25-3.63V

T550B256K100BH0100

T550B256K100BH0100

CAP TANT POLY 25UF 100V AXIAL

VJ0402V393ZXXCW1BC

VJ0402V393ZXXCW1BC

CAP CER 0.039UF 25V Y5V 0402

VI-231-EU-S

VI-231-EU-S

DC DC CONVERTER 12V 200W

Q6004F42

Q6004F42

TRIAC 600V 4A TO202

09281486985

09281486985

DIN-SIGNAL 2R048MP-13,0C1-2

Datasheet & Documents

ixtm67n10.pdf

PDF Document · 4 pages

Download

Datasheet Preview

Download