Heisener Electronics
BOM

IXTH6N120

1200V|6A (Tc)|300W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 1200V 6A TO-247AD

Specifications

Brand
IXYS
Package
TO-247 (IXTH)
Packaging
—
Weight
—

Total Inventory

143pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTH6N120 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.6Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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Datasheet & Documents

ixtt6n120.pdf

PDF Document · 4 pages

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