Heisener Electronics
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IXTH6N100D2

1000V|6A (Tc)|300W (Tc)
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MOSFET N-CH 1000V 6A TO247

Specifications

Brand
IXYS
Package
TO-247 (IXTH)
Packaging
—
Weight
—

Total Inventory

647pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTH6N100D2 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.2Ohm @ 3A, 0V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs95nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2650pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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Datasheet & Documents

ixtp6n100d2.pdf

PDF Document · 5 pages

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