Heisener Electronics
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IXTH48N20

200V|48A (Tc)|275W (Tc)
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MOSFET N-CH 200V 48A TO-247

Specifications

Brand
IXYS
Package
TO-247 (IXTH)
Packaging
—
Weight
—

Total Inventory

157pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTH48N20 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3000pF @ 25V
FET Feature-
Power Dissipation (Max)275W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 (IXTH)
Package / CaseTO-247-3

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Datasheet & Documents

ixth48n20.pdf

PDF Document · 2 pages

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