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IXTH1N170DHV

1700V|1A (Tj)|290W (Tc)
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MOSFET N-CH

Specifications

Brand
IXYS
Package
TO-247HV
Packaging
—
Weight
—

Total Inventory

363pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTH1N170DHV from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1700V
Current - Continuous Drain (Id) @ 25°C1A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs16Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3090pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)290W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247HV
Package / CaseTO-247-3 Variant

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Datasheet & Documents

ixta1n170dhv.pdf

PDF Document · 5 pages

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