Heisener Electronics
BOM

IXTD3N60P-2J

600V|3A (Tc)|70W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 600

Specifications

Brand
IXYS
Package
Die
Packaging
—
Weight
—

Total Inventory

500pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTD3N60P-2J from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesPolarHV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.9Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs9.8nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds411pF @ 25V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDie
Package / CaseDie

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