Heisener Electronics
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IXTB30N100L

1000V|30A (Tc)|800W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 1000V 30A PLUS264

Specifications

Brand
IXYS
Package
PLUS264™
Packaging
—
Weight
—

Total Inventory

478pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTB30N100L from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs450mOhm @ 500mA, 20V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs545nC @ 20V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds13200pF @ 25V
FET Feature-
Power Dissipation (Max)800W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePLUS264™
Package / CaseTO-264-3, TO-264AA

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Datasheet & Documents

ixtb30n100l.pdf

PDF Document · 5 pages

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