Heisener Electronics
BOM

IXTA80N10T7

100V|80A (Tc)|230W (Tc)
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MOSFET N-CH 100V 80A TO-263-7

Specifications

Brand
IXYS
Package
TO-263-7 (IXTA..7)
Packaging
—
Weight
—

Total Inventory

252pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTA80N10T7 from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesTrenchMV™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3040pF @ 25V
FET Feature-
Power Dissipation (Max)230W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7 (IXTA..7)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

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Datasheet & Documents

ixta80n10t7.pdf

PDF Document · 5 pages

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