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1000 V|6A (Tj)|300W (Tc)
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MOSFET N-CH 1000V 6A TO263HV
Specifications
- Brand
- IXYS
- Package
- TO-263HV
- Packaging
- —
- Weight
- —
Total Inventory
0pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how IXTA6N100D2HV from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | IXYS | |
| Series | Depletion | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 1000 V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tj) | |
| Drive Voltage (Max Rds On, Min Rds On) | 0V | |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 3A, 0V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 5 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 2650 pF @ 10 V | |
| FET Feature | Depletion Mode | |
| Power Dissipation (Max) | 300W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-263HV | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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