Heisener Electronics
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IXTA52P10P

100V|52A (Tc)|300W (Tc)
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MOSFET P-CH 100V 52A TO-263

Specifications

Brand
IXYS
Package
TO-263 (IXTA)
Packaging
—
Weight
—

Total Inventory

609pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTA52P10P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesPolarP™
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C52A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs60nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2845pF @ 25V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Datasheet & Documents

ixth52p10p.pdf

PDF Document · 6 pages

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Datasheet Preview

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