Heisener Electronics
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IXTA4N80P-TRL

800 V|3.6A (Tc)|100W (Tc)
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MOSFET N-CH 800V 3.6A TO263

Specifications

Brand
IXYS
Package
TO-263 (D2PAK)
Packaging
—
Weight
—

Total Inventory

0pcs

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MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTA4N80P-TRL from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
SeriesPolar
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs3.4Ohm @ 1.8A, 10V
Vgs(th) (Max) @ Id5.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs14.2 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (D2PAK)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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