Heisener Electronics
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IXTA3N100D2HV

1000V|3A (Tj)|125W (Tc)
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MOSFET N-CH

Specifications

Brand
IXYS
Package
TO-263HV
Packaging
—
Weight
—

Total Inventory

465pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTA3N100D2HV from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerIXYS
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)0V
Rds On (Max) @ Id, Vgs6Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs37.5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1020pF @ 25V
FET FeatureDepletion Mode
Power Dissipation (Max)125W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263HV
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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