Heisener Electronics
BOM

IXTA1R4N100P

1000V|1.4A (Tc)|63W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 1000V 1.4A TO-263

Specifications

Brand
IXYS
Package
TO-263 (IXTA)
Packaging
—
Weight
—

Total Inventory

325pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how IXTA1R4N100P from IXYS fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerIXYS
SeriesPolar™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000V
Current - Continuous Drain (Id) @ 25°C1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs11Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs17.8nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds450pF @ 25V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXTA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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